However, one of the critical issues hindering 2-D materials from the adoption in the MOSFETs technology is the challenge to dope 2-D materials effectively to n- or p-type, which lies in the heart of MOSFETs technology. Such 2-D materials are attractive candidates especially for the channel materials in the aggressively scaled metal-oxide-semiconductor field effect transistors (MOSFETs) since their extreme thinness allows almost ideal electrostatic control over the channel, making them robust to short channel effects 1, 2, 3, 4, 5, 6, 7. Over the past few years, gapped two-dimensional (2-D) materials represented by MoS 2 1, 2 and phosphorene 3, 4 have been widely explored for the future device applications. We comprehensively analyze the competitiveness of arsenene heterostructure MOSFETs through benchmarking with monolayer arsenene homostructure MOSFETs equipped with the highly degenerate doped source and drain, suggesting superior performance of heterostructure MOSFETs over homostructure MOSFETs.

The intrinsic upper limit of the on-state current in arsenene heterostructure MOSFETs is estimated by studying the effect of layer number in the source and drain. We investigate the potential performance of arsenene heterostructure MOSFETs through atomistic simulations using density functional theory and nonequilibrium Green’s function. Metallic multilayer arsenene in the source and drain can serve as electrodes without doping. Utilizing this extraordinary property, we propose doping-free arsenene heterostructure MOSFETs based on the lateral multilayer (metallic source)/monolayer (semiconducting channel)/multilayer (metallic drain) arsenene heterostructure. Recently, an unusual phase transition from semiconductor to metal driven by the thickness modulation has been predicted in mono-elemental 2-D material arsenene. Even with the excellent electrostatic integrity inherent in 2-D system, however, 2-D materials suffer from the lack of efficient doping method which is crucial in MOSFETs technology. Two-dimensional (2-D) materials such as MoS 2 and phosphorene provide an ideal platform to realize extremely thin body metal-oxide-semiconductor field effect transistors (MOSFETs) which is highly immune to short channel effects in the ultra-scaled regime.

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